The analysis of impedance properties of combined light-reception optonegatron
Keywords:
optonegatron, phototransistor, invariant stability coefficient, impedanceAbstract
The mathematical model of combined optonegatron on the bipolar phototransistor base is offered, the research of influence of intensity of optical radiation on the basic impedance characteristics of combined optonegatrons in the range of frequencies where they are potential - unstable is carried out.Downloads
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Published
2010-11-12
How to Cite
[1]
M. A. Filyniuk and S. Y. Shveikina, “The analysis of impedance properties of combined light-reception optonegatron”, Вісник ВПІ, no. 5, pp. 155–158, Nov. 2010.
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Section
Radioelectronics and radioelectronic equipment manufacturing
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