Determination of physical model of double-gatefield-effect Shotky transistor

Authors

  • M. A. Filyniuk
  • D. V. Havrilov
  • L. B. Lishchynska

Keywords:

shotky transistor, physical model, steady amplification

Abstract

The paper considers the method intended for determination of equivalent circuit parameters of active region of single-gate MESFET (MESFET1) crystal. The method is based on the results of measurement of maximal steady amplification factor at different schemes of its turning on, enabling to decrease the influence of part of case elements and passive area of the crystal.

Downloads

Abstract views: 132

Published

2010-11-12

How to Cite

[1]
M. A. Filyniuk, D. V. Havrilov, and L. B. Lishchynska, “Determination of physical model of double-gatefield-effect Shotky transistor”, Вісник ВПІ, no. 4, pp. 93–96, Nov. 2010.

Issue

No 4 (2004)

Section

Radioelectronics and radioelectronic equipment manufacturing

Metrics

Downloads

Download data is not yet available.

License

Authors who publish with this journal agree to the following terms:

  • Authors retain copyright and grant the journal right of first publication.
  • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
  • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).

Most read articles by the same author(s)

<< < 1 2