Determination of physical model of double-gatefield-effect Shotky transistor

Authors

  • M. A. Filyniuk
  • D. V. Havrilov
  • L. B. Lishchynska

Keywords:

shotky transistor, physical model, steady amplification

Abstract

The paper considers the method intended for determination of equivalent circuit parameters of active region of single-gate MESFET (MESFET1) crystal. The method is based on the results of measurement of maximal steady amplification factor at different schemes of its turning on, enabling to decrease the influence of part of case elements and passive area of the crystal.

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Published

2010-11-12

How to Cite

[1]
M. A. Filyniuk, D. V. Havrilov, and L. B. Lishchynska, “Determination of physical model of double-gatefield-effect Shotky transistor”, Вісник ВПІ, no. 4, pp. 93–96, Nov. 2010.

Issue

No 4 (2004)

Section

Radioelectronics and radioelectronic equipment manufacturing

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