The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel

Authors

  • V. S. Osadchuk
  • O. V. Osadchuk
  • O. M. Ilchenko
  • S. V. Baraban

Keywords:

photoreactive effect, field-effect transistor, complete resistance, optical radiation

Abstract

The analysis of photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel on the basis of the solution of equation of continuity of charge transmitters in the channel of transistor under the influence of light is conducted. It enabled the possibility to calculate in theoretically complete resistance of the channel and obtain analytical dependence of its constituents on power of optical radiation.

Downloads

Abstract views: 140

Published

2010-11-12

How to Cite

[1]
V. S. Osadchuk, O. V. Osadchuk, O. M. Ilchenko, and S. V. Baraban, “The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel”, Вісник ВПІ, no. 4, pp. 92–98, Nov. 2010.

Issue

No 4 (2008)

Section

Radioelectronics and radioelectronic equipment manufacturing

Metrics

Downloads

Download data is not yet available.

License

Authors who publish with this journal agree to the following terms:

  • Authors retain copyright and grant the journal right of first publication.
  • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
  • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).