Active ultrahigh frequency filters on the basis of dual-gate FET

Authors

  • M. A. Filyniuk
  • O. M. Kuzemko
  • Salekh M M Zhurban
  • L. B. Lishchynska

Keywords:

active filters, negatron, dual-gate fet, semiconductor inductor

Abstract

There had been suggested the new method for the realization of the semiconductor inductor based on the dual-gate FET and synthesized on its basis the circuits of the reciprocal and nonreciprocal active ultrahigh filters. There had been given the results of the mathematic simulation of the developed active filters, which demonstrate, that the developed active inductivity allows to realize the ultrahigh frequency filters in the integral kind.

Downloads

Abstract views: 131

Published

2010-11-12

How to Cite

[1]
M. A. Filyniuk, O. M. Kuzemko, S. M. M. Zhurban, and L. B. Lishchynska, “Active ultrahigh frequency filters on the basis of dual-gate FET”, Вісник ВПІ, no. 3, pp. 43–53, Nov. 2010.

Issue

No 3 (2006)

Section

Radioelectronics and radioelectronic equipment manufacturing

Metrics

Downloads

Download data is not yet available.

License

Authors who publish with this journal agree to the following terms:

  • Authors retain copyright and grant the journal right of first publication.
  • Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
  • Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).