The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel
Keywords:
photoreactive effect, field-effect transistor, complete resistance, optical radiationAbstract
The analysis of photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel on the basis of the solution of equation of continuity of charge transmitters in the channel of transistor under the influence of light is conducted. It enabled the possibility to calculate in theoretically complete resistance of the channel and obtain analytical dependence of its constituents on power of optical radiation.Downloads
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Published
2010-11-12
How to Cite
[1]
V. S. Osadchuk, O. V. Osadchuk, O. M. Ilchenko, and S. V. Baraban, “The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel”, Вісник ВПІ, no. 4, pp. 92–98, Nov. 2010.
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Section
Radioelectronics and radioelectronic equipment manufacturing
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