Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor
Keywords:
ferroelectric thin films, sol-gel process, radiomeasuring microelectronic transformers of temperature, metal-ferroelectric-semiconductor structure, transistors structures with negative resistanceAbstract
In the paper modern technologies of ferroelectric| thin films, methods of construction of radiomeasuring | microelectronic transformers of temperature are analyzed. A new method of measuring of temperature on the basis of combined ferroelectric thin | films and transistors structures with negative resistance was offered and electric circuits of radiomeasuring | microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor were developed.Downloads
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Published
2010-11-12
How to Cite
[1]
V. S. Osadchuk, O. V. Osadchuk, S. V. Baraban, and O. M. Ilchenko, “Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor”, Вісник ВПІ, no. 3, pp. 94–97, Nov. 2010.
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Section
Radioelectronics and radioelectronic equipment manufacturing
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